onsemi
NSVMMBT5401WT1G
Bipolar Transistors - BJT PNP HIGH VOLTAGE TRA
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- MMBT5401W
- Package
- SC-70-3
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
20 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Maximum DC Collector Current
- 500 mA
- Collector- Emitter Voltage VCEO Max
- 150 V
- Collector- Base Voltage VCBO
- 160 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 500 mV
- Pd - Power Dissipation
- 400 mW
- Gain Bandwidth Product fT
- 300 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
Show more parameters (8)
- Qualification
- AEC-Q101
- Continuous Collector Current
- - 500 mA
- Country of Assembly
- CN
- Country of Diffusion
- MY
- Country of Origin
- CN
- DC Collector/Base Gain hfe Min
- 40
- DC Current Gain hFE Max
- 200
- Unit Weight
- 0.000212 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.