Nexperia
PUMX1,115
Bipolar Transistors - BJT TRANS DOUBLE TAPE-7
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Package
- TSSOP-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
19 parameters- Transistor Polarity
- NPN
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 40 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 5 V
- Maximum DC Collector Current
- 0.1 A
- Pd - Power Dissipation
- 200 mW
- Gain Bandwidth Product fT
- 100 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 120 at 1 mA, 6 V
- Height
- 1 mm
Show more parameters (7)
- Length
- 2.2 mm
- Technology
- Si
- Width
- 1.35 mm
- DC Collector/Base Gain hfe Min
- 120
- Qualification
- AEC-Q101
- Part # Aliases
- PUMX1 T/R
- Unit Weight
- 0.000212 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.