Central Semiconductor
2N6467
Bipolar Transistors - BJT PNP 4.0A 40W 110Vcbo 100Vceo
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N64
- Package
- TO-66-2
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 100 V
- Collector- Base Voltage VCBO
- 110 V
- Collector-Emitter Saturation Voltage
- 1.2 V
- Gain Bandwidth Product fT
- 5 MHz
- DC Current Gain hFE Max
- 150 at 1.5 A
- Continuous Collector Current
- 4 A
- DC Collector/Base Gain hfe Min
- 15 at 1.5 A
- Pd - Power Dissipation
- 40 W
- Part # Aliases
- 2N6467 PBFREE
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.