ON Semiconductor
NSS40200UW6T1G
Bipolar Transistors - BJT WDFN6 2*2 LOW VCE (SAT) TR
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- NSS40200UW6T1G
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 40 V
- Collector- Base Voltage VCBO
- - 40 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- - 0.1 V
- Maximum DC Collector Current
- 2 A
- Gain Bandwidth Product fT
- 140 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Height
- 0.75 mm
- Length
- 2 mm
Show more parameters (5)
- Width
- 2 mm
- Continuous Collector Current
- - 2 A
- DC Collector/Base Gain hfe Min
- 250
- Pd - Power Dissipation
- 875 mW
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.