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onsemi

NVVR26A120M1WSB

MOSFET Modules SIC A1HPM 1200 V

Basic Information

View Datasheet ↗
Manufacturer
onsemi
Product Category
MOSFET Modules
Package
AHPM-15
Mounting Style
Screw Mount
Packaging
Tube

Technical Specifications

20 parameters
Technology
SiC
Transistor Polarity
N-Channel
Number of Channels
2 Channel
Vds - Drain-Source Breakdown Voltage
1.2 kV
Id - Continuous Drain Current
400 A
Vgs - Gate-Source Voltage
- 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage
3.2 V
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
1 kW
Configuration
Half-Bridge
Country of Origin
CN
Show more parameters (8)
Fall Time
51 ns
Height
5 mm
Length
55.2 mm
Rise Time
59 ns
Type
Power Modules
Typical Turn-Off Delay Time
220 ns
Typical Turn-On Delay Time
125 ns
Width
55.2 mm

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NVVR26A120M1WSB Specifications and Datasheet | ChipSourceHub