Infineon Technologies
BCR 555 E6433
Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- Bipolar Transistors - Pre-Biased
- Series
- BCR555
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Configuration
- Single
- Transistor Polarity
- PNP
- Typical Input Resistor
- 2.2 kOhms
- Typical Resistor Ratio
- 0.22
- DC Collector/Base Gain hfe Min
- 70
- Collector- Emitter Voltage VCEO Max
- 50 V
- Continuous Collector Current
- 500 mA
- Peak DC Collector Current
- 500 mA
- Pd - Power Dissipation
- 330 mW
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Emitter- Base Voltage VEBO
- 50 V
Show more parameters (6)
- Height
- 1 mm
- Length
- 2.9 mm
- Width
- 1.3 mm
- Maximum DC Collector Current
- 500 mA
- Part # Aliases
- BCR555E6433HTMA1 BCR555E6433XT SP000010857
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.