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ROHM Semiconductor

IMX1T108

Bipolar Transistors - BJT TRANS GP BJT NPN 50V 0.15A 6PIN

Basic Information

View Datasheet ↗
Manufacturer
ROHM Semiconductor
Product Category
Bipolar Transistors - BJT
Series
IMX1
Package
SC-74-6
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

14 parameters
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage VCEO Max
50 V
Collector- Base Voltage VCBO
60 V
Emitter- Base Voltage VEBO
7 V
Collector-Emitter Saturation Voltage
0.4 V
Maximum DC Collector Current
150 mA
Gain Bandwidth Product fT
180 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
560
Continuous Collector Current
150 mA
Show more parameters (2)
DC Collector/Base Gain hfe Min
120
Pd - Power Dissipation
300 mW

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

IMX1T108 Specifications and Datasheet | ChipSourceHub