Microchip / Microsemi
2N2945AUB/TR
Bipolar Transistors - BJT BJTs
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip / Microsemi
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-46-3
- Mounting Style
- Through Hole
- Packaging
- Cut Tape
Technical Specifications
12 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 20 V
- Collector- Base Voltage VCBO
- - 25 V
- Emitter- Base Voltage VEBO
- - 25 V
- Maximum DC Collector Current
- - 100 mA
- Pd - Power Dissipation
- 400 mW
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- Technology
- Si
- Continuous Collector Current
- - 100 mA
- DC Collector/Base Gain hfe Min
- 30
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.