Toshiba
TK10A80E,S4X
MOSFET PLN MOS 800V 1000m (VGS=10V) TO-220SIS
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- MOSFET
- Series
- TK10A80E
- Package
- TO-220FP-3
- Mounting Style
- Through Hole
- RoHS
- Compliant (source record)
Technical Specifications
24 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 800 V
- Id - Continuous Drain Current
- 10 A
- Rds On - Drain-Source Resistance
- 700 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Vgs - Gate-Source Voltage
- 30 V
- Qg - Gate Charge
- 46 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 50 W
Show more parameters (12)
- Configuration
- Single
- Channel Mode
- Enhancement
- Tradename
- MOSVIII
- Height
- 15 mm
- Length
- 10 mm
- Transistor Type
- 1 N-Channel
- Width
- 4.5 mm
- Fall Time
- 35 ns
- Rise Time
- 40 ns
- Typical Turn-Off Delay Time
- 140 ns
- Typical Turn-On Delay Time
- 80 ns
- Unit Weight
- 0.211644 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.