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MACOM

UF28100V

RF MOSFET Transistors 100-500MHz 100Watts 28Volt 10dB

Basic Information

View Datasheet ↗
Manufacturer
MACOM
Product Category
RF MOSFET Transistors
Package
744A-01
Mounting Style
SMD/SMT
Packaging
Tray

Technical Specifications

15 parameters
Transistor Polarity
N-Channel
Technology
Si
Id - Continuous Drain Current
12 A
Vds - Drain-Source Breakdown Voltage
65 V
Gain
10 dB
Output Power
100 W
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Configuration
Dual
Operating Frequency
100 MHz to 500 MHz
Type
RF Power MOSFET
Forward Transconductance - Min
1.5 S
Show more parameters (3)
Pd - Power Dissipation
250 W
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
6 V

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

UF28100V Specifications and Datasheet | ChipSourceHub