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Toshiba

TPCA8120,L1Q

MOSFETs LVMOS SOP-8-ADV

Basic Information

View Datasheet ↗
Manufacturer
Toshiba
Product Category
MOSFETs
Package
SOP-8
Mounting Style
SMD/SMT

Technical Specifications

19 parameters
Technology
Si
Transistor Polarity
P-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - Continuous Drain Current
45 A
Rds On - Drain-Source Resistance
4 mOhms
Vgs - Gate-Source Voltage
- 25 V, 20 V
Vgs th - Gate-Source Threshold Voltage
2 V
Qg - Gate Charge
190 nC
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
45 W
Channel Mode
Enhancement
Show more parameters (7)
Configuration
Single
Country of Origin
MY
Fall Time
262 ns
Rise Time
10 ns
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
762 ns
Typical Turn-On Delay Time
18 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

TPCA8120,L1Q Specifications and Datasheet | ChipSourceHub