NXP Semiconductors
MRF6V2010GNR1
RF MOSFET Transistors VHV6 10W TO270-2GN
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Package
- TO-270-2
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- E
Technical Specifications
14 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Vds - Drain-Source Breakdown Voltage
- 110 V
- Gain
- 23.9 dB
- Output Power
- 10 W
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Operating Frequency
- 450 MHz
- Type
- RF Power MOSFET
- Moisture Sensitive
- Yes
- Vgs - Gate-Source Voltage
- 10 V
- Vgs th - Gate-Source Threshold Voltage
- 3 V
Show more parameters (2)
- Part # Aliases
- 935321298528
- Unit Weight
- 0.019330 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.