Diodes Incorporated
MMDT5451Q-7
Bipolar Transistors - BJT SS Hi Voltage Transistor SOT363 T&R 3K
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT363-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
15 parameters- Transistor Polarity
- NPN, PNP
- Configuration
- Dual
- Maximum DC Collector Current
- 200 mA
- Collector- Emitter Voltage VCEO Max
- 160 V, 150 V
- Collector- Base Voltage VCBO
- 180 V, 160 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 200 mV, 500 mV
- Pd - Power Dissipation
- 320 mW
- Gain Bandwidth Product fT
- 300 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 200 mA
Show more parameters (3)
- Country of Origin
- CN
- DC Collector/Base Gain hfe Min
- 80
- DC Current Gain hFE Max
- 250
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.