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ON Semiconductor

2SD1628F-TD-H

Bipolar Transistors - BJT BIP NPN 5A 20V

Basic Information

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Manufacturer
ON Semiconductor
Product Category
Bipolar Transistors - BJT
Series
2SD1628
Package
TO-243-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

13 parameters
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage VCEO Max
20 V
Collector- Base Voltage VCBO
60 V
Emitter- Base Voltage VEBO
6 V
Collector-Emitter Saturation Voltage
500 mV
Maximum DC Collector Current
5 A
Gain Bandwidth Product fT
120 MHz
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
560
DC Collector/Base Gain hfe Min
120
Pd - Power Dissipation
500 mW
Show more parameters (1)
Unit Weight
0.004586 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

2SD1628F-TD-H Specifications and Datasheet | ChipSourceHub