Microchip / Microsemi
2N6990
Bipolar Transistors - BJT BJTs
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip / Microsemi
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-116-14
- Mounting Style
- Through Hole
- Packaging
- Tray
- RoHS
- Not compliant (source record)
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Quad
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 75 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 300 mV
- Maximum DC Collector Current
- 800 mA
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- DC Current Gain hFE Max
- 325 at 1 mA, 10 VDC
- DC Collector/Base Gain hfe Min
- 75 at 1 mA, 10 VDC
Show more parameters (2)
- Pd - Power Dissipation
- 1.5 W
- Unit Weight
- 0.014110 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.