Microchip / Microsemi
APT100GN120JDQ4
IGBT Modules FG, IGBT-COMBI, 600V, SOT-227
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip / Microsemi
- Product Category
- IGBT Modules
- Package
- ISOTOP-4
- Mounting Style
- SMD/SMT
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
11 parameters- Product
- IGBT Silicon Carbide Modules
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 1.2 kV
- Collector-Emitter Saturation Voltage
- 1.7 V
- Continuous Collector Current at 25 C
- 153 A
- Gate-Emitter Leakage Current
- 600 nA
- Pd - Power Dissipation
- 446 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Technology
- SiC
- Maximum Gate Emitter Voltage
- 30 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.