onsemi
2SC3646T-TD-E
Bipolar Transistors - BJT BIP NPN 1A 100V
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SC3646
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
17 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 1 A
- Collector- Emitter Voltage VCEO Max
- 100 V
- Collector- Base Voltage VCBO
- 120 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 100 mV
- Pd - Power Dissipation
- 500 mW
- Gain Bandwidth Product fT
- 120 MHz
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 1 A
Show more parameters (5)
- Country of Assembly
- CN
- Country of Diffusion
- JP
- Country of Origin
- CN
- DC Current Gain hFE Max
- 400
- Unit Weight
- 0.001810 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.