Taiwan Semiconductor
TSC5802DCP ROG
Bipolar Transistors - BJT High voltage fast Switching NPN Transistor with diode
Basic Information
View Datasheet ↗- Manufacturer
- Taiwan Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-252-3
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 450 V
- Collector- Base Voltage VCBO
- 1050 V
- Emitter- Base Voltage VEBO
- 15 V
- Collector-Emitter Saturation Voltage
- 1.5 V
- Maximum DC Collector Current
- 4 A
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 100
- Continuous Collector Current
- 2.5 A
- DC Collector/Base Gain hfe Min
- 18
Show more parameters (3)
- Moisture Sensitive
- Yes
- Pd - Power Dissipation
- 30 W
- Unit Weight
- 0.011993 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.