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Vishay Semiconductors

IRFR9210PBF

MOSFETs TO252 200V 1.9A P-CH MOSFET

Basic Information

View Datasheet ↗
Manufacturer
Vishay
Brand
Vishay Semiconductors
Product Category
MOSFETs
Series
IRFR
Package
DPAK-3 (TO-252-3)
Mounting Style
SMD/SMT
Packaging
Tube

Technical Specifications

16 parameters
Technology
Si
Transistor Polarity
P-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
200 V
Id - Continuous Drain Current
1.9 A
Rds On - Drain-Source Resistance
3 Ohms
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
4 V
Qg - Gate Charge
8.9 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
25 W
Show more parameters (4)
Channel Mode
Enhancement
Configuration
Single
Country of Origin
CN
Unit Weight
0.011640 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

IRFR9210PBF Specifications and Datasheet | ChipSourceHub