Qorvo
QPD2730
RF JFET Transistors 2.575-2.635GHz 48V 110/220 Watt GaN
Basic Information
View Datasheet ↗- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Series
- QPD
- Package
- NI780-4
- Mounting Style
- SMD/SMT
- Packaging
- Waffle
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Type
- HEMT
- Technology
- GaN SiC
- Gain
- 16 dB
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 48 V
- Id - Continuous Drain Current
- 210 mA
- Output Power
- 36 W
- Maximum Drain Gate Voltage
- 55 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 85 C
- Pd - Power Dissipation
- 18.6 W
- Configuration
- Dual
Show more parameters (5)
- Operating Frequency
- 2.575 GHz to 2.635 GHz
- Operating Temperature Range
- - 40 C to + 85 C
- Moisture Sensitive
- Yes
- Vgs th - Gate-Source Threshold Voltage
- - 2.7 V, - 4.75 V
- Part # Aliases
- 1131813
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.