Toshiba
TK17A80W,S4X
MOSFET N-Ch 800V 2050pF 32nC 17A 45W
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- MOSFET
- Series
- TK17A80W
- Package
- TO-220FP-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
23 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 800 V
- Id - Continuous Drain Current
- 17 A
- Rds On - Drain-Source Resistance
- 250 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 3 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 32 nC
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 45 W
- Configuration
- Single
Show more parameters (11)
- Channel Mode
- Enhancement
- Tradename
- DTMOSIV
- Height
- 15 mm
- Length
- 10 mm
- Transistor Type
- 1 N-Channel
- Width
- 4.5 mm
- Fall Time
- 7 ns
- Rise Time
- 24 ns
- Typical Turn-Off Delay Time
- 80 ns
- Typical Turn-On Delay Time
- 58 ns
- Unit Weight
- 0.068784 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.