ON Semiconductor / Fairchild
FFB5551
Bipolar Transistors - BJT NPN MULTI-CHIP GEN PURPOSE
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Brand
- ON Semiconductor / Fairchild
- Product Category
- Bipolar Transistors - BJT
- Series
- FFB5551
- Package
- SC-70-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Polarity
- NPN
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 160 V
- Collector- Base Voltage VCBO
- 180 V
- Emitter- Base Voltage VEBO
- 6 V
- Maximum DC Collector Current
- 0.2 A
- Gain Bandwidth Product fT
- 300 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 250
- Height
- 1 mm
- Length
- 2 mm
Show more parameters (5)
- Width
- 1.25 mm
- Continuous Collector Current
- 200 mA
- DC Collector/Base Gain hfe Min
- 80
- Pd - Power Dissipation
- 200 mW
- Unit Weight
- 0.000988 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.