ROHM Semiconductor
R8002ANX
MOSFET 10V Drive Nch MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- MOSFET
- Series
- R8002ANX
- Package
- TO-220FP-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 800 V
- Id - Continuous Drain Current
- 2 A
- Rds On - Drain-Source Resistance
- 4.3 Ohms
- Vgs - Gate-Source Voltage
- 30 V
- Qg - Gate Charge
- 12.7 nC
- Pd - Power Dissipation
- 35 W
- Configuration
- Single
- Transistor Type
- 1 N-Channel
- Fall Time
- 70 ns
Show more parameters (5)
- Rise Time
- 20 ns
- Typical Turn-Off Delay Time
- 33 ns
- Typical Turn-On Delay Time
- 17 ns
- Part # Aliases
- R8002ANX
- Unit Weight
- 0.211644 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.