Qorvo
QPD2731SR
RF JFET Transistors 110/200 Watt, 48 Volt, 2.5-2.7 GHz, GaN Asymmetric Doherty
Basic Information
View Datasheet ↗- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Package
- NI780-4
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Transistor Type
- HEMT
- Technology
- GaN SiC
- Gain
- 16.3 dB
- Transistor Polarity
- N-Channel
- Output Power
- 316 W
- Maximum Drain Gate Voltage
- 55 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 85 C
- Configuration
- Dual
- Operating Frequency
- 2.5 GHz to 2.7 GHz
- Development Kit
- QPD2731EVB1.0
- Moisture Sensitive
- Yes
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.