Microchip Technology
MSC180SMA120B4N
SiC MOSFETs MOSFET SIC 1200 V 180 mOhm TO-247-4 Notch
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip Technology
- Product Category
- SiC MOSFETs
- Package
- TO-247-4
- Mounting Style
- Through Hole
Technical Specifications
21 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 21 A
- Rds On - Drain-Source Resistance
- 225 mOhms
- Vgs - Gate-Source Voltage
- - 10 V, + 23 V
- Vgs th - Gate-Source Threshold Voltage
- 5 V
- Qg - Gate Charge
- 36 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 147 W
- Channel Mode
- Enhancement
Show more parameters (9)
- Configuration
- Single
- Fall Time
- 12 ns
- Product
- MOSFET
- Rise Time
- 15 ns
- Technology
- SiC
- Transistor Type
- 1 N-Channel
- Type
- mSIC MOSFET
- Typical Turn-Off Delay Time
- 25 ns
- Typical Turn-On Delay Time
- 19 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.