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Toshiba

RN1309,LF

Bipolar Transistors - Pre-Biased Bias Resistor NPN .1A 50V 47kohm

Basic Information

View Datasheet ↗
Manufacturer
Toshiba
Product Category
Bipolar Transistors - Pre-Biased
Series
RN1309
Package
SOT-323-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

15 parameters
Configuration
Single
Transistor Polarity
NPN
Typical Input Resistor
47 kOhms
Typical Resistor Ratio
2.14
DC Collector/Base Gain hfe Min
70
Maximum Operating Frequency
250 MHz
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
100 mW
Maximum Operating Temperature
+ 150 C
Emitter- Base Voltage VEBO
15 V
Show more parameters (3)
Channel Mode
Enhancement
Maximum DC Collector Current
100 mA
Unit Weight
0.000212 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

RN1309,LF Specifications and Datasheet | ChipSourceHub