Infineon Technologies
AUIRGPS4070D0
IGBT Transistors DISCRETES
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- IGBT Transistors
- Package
- Super-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Technology
- Si
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 1.7 V
- Maximum Gate Emitter Voltage
- 20 V
- Continuous Collector Current at 25 C
- 240 A
- Pd - Power Dissipation
- 750 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Qualification
- AEC-Q101
- Continuous Collector Current Ic Max
- 240 A
- Gate-Emitter Leakage Current
- 100 nA
Show more parameters (1)
- Part # Aliases
- SP001582478
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.