ON Semiconductor
PCP1208-TD-H
Bipolar Transistors - BJT BIP NPN 0.7A 200V
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- PCP1208
- Package
- SOT-89-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 200 V
- Collector- Base Voltage VCBO
- 220 V
- Emitter- Base Voltage VEBO
- 8 V
- Collector-Emitter Saturation Voltage
- 115 mV
- Maximum DC Collector Current
- 700 mA
- Gain Bandwidth Product fT
- 120 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 560
- DC Collector/Base Gain hfe Min
- 200
Show more parameters (2)
- Pd - Power Dissipation
- 3.5 W
- Unit Weight
- 0.001965 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.