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onsemi

MMBT5089LT1G

Bipolar Transistors - BJT 50mA 30V NPN

Basic Information

View Datasheet ↗
Manufacturer
onsemi
Product Category
Bipolar Transistors - BJT
Series
MMBT5089L
Package
SOT-23-3
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

18 parameters
Technology
Si
Transistor Polarity
NPN
Configuration
Single
Maximum DC Collector Current
50 mA
Collector- Emitter Voltage VCEO Max
25 V
Collector- Base Voltage VCBO
30 V
Emitter- Base Voltage VEBO
4.5 V
Collector-Emitter Saturation Voltage
500 mV
Pd - Power Dissipation
225 mW
Gain Bandwidth Product fT
50 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Show more parameters (6)
Continuous Collector Current
50 mA
Country of Assembly
CN
Country of Diffusion
JP
Country of Origin
CN
DC Collector/Base Gain hfe Min
400
Unit Weight
0.001411 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

MMBT5089LT1G Specifications and Datasheet | ChipSourceHub