Wolfspeed / Cree
CG2H80030D-GP4
RF JFET Transistors GaN HEMT Die DC-8.0GHz, 30 Watt
Basic Information
View Datasheet ↗- Manufacturer
- Cree, Inc.
- Brand
- Wolfspeed / Cree
- Product Category
- RF JFET Transistors
- Package
- Die
- Mounting Style
- SMD/SMT
- Packaging
- Gel Pack
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Transistor Type
- HEMT
- Technology
- GaN
- Gain
- 16.5 dB
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 120 V
- Vgs - Gate-Source Breakdown Voltage
- - 10 V, 2 V
- Id - Continuous Drain Current
- 3 A
- Output Power
- 30 W
- Maximum Operating Temperature
- + 225 C
- Operating Frequency
- 8 GHz
- Rds On - Drain-Source Resistance
- 410 mOhms
- Vgs th - Gate-Source Threshold Voltage
- - 3 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.