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STMicroelectronics

STP20NM50

MOSFET N-Ch 500 Volt 20 Amp

Basic Information

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Manufacturer
STMicroelectronics
Product Category
MOSFET
Series
STP20NM50
Package
TO-220-3
Mounting Style
Through Hole
RoHS
Compliant (source record)

Technical Specifications

25 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
500 V
Id - Continuous Drain Current
20 A
Rds On - Drain-Source Resistance
250 mOhms
Vgs th - Gate-Source Threshold Voltage
3 V
Vgs - Gate-Source Voltage
10 V
Qg - Gate Charge
40 nC
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
192 W
Show more parameters (13)
Configuration
Single
Channel Mode
Enhancement
Height
9.15 mm
Length
10.4 mm
Transistor Type
1 N-Channel Power MOSFET
Type
MOSFET
Width
4.6 mm
Forward Transconductance - Min
10 S
Fall Time
12 ns
Rise Time
16 ns
Typical Turn-Off Delay Time
40 ns
Typical Turn-On Delay Time
24 ns
Unit Weight
0.079014 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

STP20NM50 Specifications and Datasheet | ChipSourceHub