ROHM Semiconductor
BC858BHZGT116
Bipolar Transistors - BJT SOT-23 BIPOLAR BJT PNP
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
17 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Maximum DC Collector Current
- 100 mA
- Collector- Emitter Voltage VCEO Max
- 30 V
- Collector- Base Voltage VCBO
- 30 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 650 mV
- Pd - Power Dissipation
- 350 mW
- Gain Bandwidth Product fT
- 250 MHz
- Maximum Operating Temperature
- + 150 C
- Qualification
- AEC-Q101
Show more parameters (5)
- Continuous Collector Current
- - 100 mA
- Country of Origin
- KR
- DC Collector/Base Gain hfe Min
- 210 at - 2 mA, - 5 V
- DC Current Gain hFE Max
- 480 at - 2 mA, - 5 V
- Part # Aliases
- BC858BHZG
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.