Central Semiconductor
2N5339
Bipolar Transistors - BJT NPN High Current
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N5339
- Package
- TO-39-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 100 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 1.2 V
- Maximum DC Collector Current
- 5 A
- Pd - Power Dissipation
- 6 W
- Gain Bandwidth Product fT
- 30 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- Technology
- Si
Show more parameters (4)
- Continuous Collector Current
- 5 A
- DC Collector/Base Gain hfe Min
- 60
- Part # Aliases
- 2N5339 BK
- Unit Weight
- 0.035486 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.