Diodes Incorporated
DXT5551P5Q-13
Bipolar Transistors - BJT Pwr Hi Voltage Transistor PDI5 T&R 5K
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Package
- PowerDI5-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
17 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 160 V
- Collector- Base Voltage VCBO
- 180 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 115 mV
- Pd - Power Dissipation
- 2.25 W
- Gain Bandwidth Product fT
- 130 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Qualification
- AEC-Q101
Show more parameters (5)
- Continuous Collector Current
- 600 mA
- Country of Origin
- CN
- DC Collector/Base Gain hfe Min
- 80 at 10 mA, 5 V
- DC Current Gain hFE Max
- 250 at 10 mA, 5 V
- Unit Weight
- 0.003280 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.