Microchip Technology
MSR2N3637UB/TR
Bipolar Transistors - BJT Small-Signal BJT
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip Technology
- Product Category
- Bipolar Transistors - BJT
- Package
- SMD-3
- Mounting Style
- SMD/SMT
Technical Specifications
13 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 175 V
- Collector- Base Voltage VCBO
- 175 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 600 mV
- Pd - Power Dissipation
- 5 W
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- Continuous Collector Current
- 1 A
- DC Collector/Base Gain hfe Min
- 55
Show more parameters (1)
- DC Current Gain hFE Max
- 300
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.