Vishay / Siliconix
SISS4410DN-T1-GE3
MOSFETs N-CHANNEL 40-V (D-S) MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay / Siliconix
- Product Category
- MOSFETs
- Series
- SISS
- Package
- PowerPAK-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
20 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 40 V
- Id - Continuous Drain Current
- 36 A
- Rds On - Drain-Source Resistance
- 9 mOhms
- Vgs - Gate-Source Voltage
- - 16 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2.4 V
- Qg - Gate Charge
- 5.3 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 19.8 W
Show more parameters (8)
- Channel Mode
- Enhancement
- Configuration
- Single
- Country of Origin
- CN
- Fall Time
- 6 ns
- Forward Transconductance - Min
- 45 S
- Rise Time
- 8 ns
- Typical Turn-Off Delay Time
- 13 ns
- Typical Turn-On Delay Time
- 14 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.