STMicroelectronics
BUL58D
Bipolar Transistors - BJT Hi Vltg Fast Swtchng NPN Pwr Transistor
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- Bipolar Transistors - BJT
- Series
- BUL58D
- Package
- TO-220-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
8 parameters- Transistor Polarity
- NPN
- Collector- Emitter Voltage VCEO Max
- 450 V
- Emitter- Base Voltage VEBO
- 9 V
- Maximum DC Collector Current
- 8 A
- Maximum Operating Temperature
- + 150 C
- DC Collector/Base Gain hfe Min
- 5
- Pd - Power Dissipation
- 85000 mW
- Unit Weight
- 0.081130 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.