Advanced Semiconductor, Inc.
MRF174
RF MOSFET Transistors RF Transistor
Basic Information
View Datasheet ↗- Manufacturer
- Advanced Semiconductor, Inc.
- Product Category
- RF MOSFET Transistors
- Package
- 221-11-3
- Mounting Style
- SMD/SMT
- Packaging
- Tray
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 13 A
- Vds - Drain-Source Breakdown Voltage
- 65 V
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- Configuration
- Single
- Operating Frequency
- 200 MHz
- Type
- RF Power MOSFET
- Pd - Power Dissipation
- 270 W
- Vgs - Gate-Source Voltage
- 40 V
- Vgs th - Gate-Source Threshold Voltage
- 3 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.