Vishay Semiconductors
SQJ112EP-T1_GE3
MOSFETs N-CHANNEL 100-V (D-S) 175C MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay Semiconductors
- Product Category
- MOSFETs
- Series
- SQJ112EP
- Package
- PowerPAK-SO-8L
- Mounting Style
- SMD/SMT
Technical Specifications
21 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 95 A
- Rds On - Drain-Source Resistance
- 7.7 mOhms
- Vgs - Gate-Source Voltage
- 20 V
- Vgs th - Gate-Source Threshold Voltage
- 3.5 V
- Qg - Gate Charge
- 58 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 185 W
Show more parameters (9)
- Channel Mode
- Enhancement
- Configuration
- Single
- Country of Origin
- CN
- Fall Time
- 5 ns
- Forward Transconductance - Min
- 115 S
- Rise Time
- 4 ns
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 31 ns
- Typical Turn-On Delay Time
- 17 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.