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Diodes Incorporated

ZXT1053AKQTC

Bipolar Transistors - BJT Pwr Low Sat Transistor TO252 T&R 2.5K

Basic Information

View Datasheet ↗
Manufacturer
Diodes Incorporated
Product Category
Bipolar Transistors - BJT
Package
TO-252-3
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

16 parameters
Technology
Si
Transistor Polarity
NPN
Configuration
Single
Maximum DC Collector Current
5 A
Collector- Emitter Voltage VCEO Max
75 V
Collector- Base Voltage VCBO
150 V
Emitter- Base Voltage VEBO
7 V
Collector-Emitter Saturation Voltage
350 mV
Pd - Power Dissipation
4 W
Gain Bandwidth Product fT
140 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Show more parameters (4)
Continuous Collector Current
5 A
Country of Origin
CN
DC Collector/Base Gain hfe Min
300
DC Current Gain hFE Max
1200

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

ZXT1053AKQTC Specifications and Datasheet | ChipSourceHub