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ON Semiconductor / Fairchild

FQA38N30

MOSFET 300V N-Channel QFET

Basic Information

View Datasheet ↗
Manufacturer
ON Semiconductor
Brand
ON Semiconductor / Fairchild
Product Category
MOSFET
Series
FQA38N30
Package
TO-3PN-3
Mounting Style
Through Hole
Packaging
Tube
RoHS
Compliant (source record)

Technical Specifications

24 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
300 V
Id - Continuous Drain Current
38.4 A
Rds On - Drain-Source Resistance
85 mOhms
Vgs - Gate-Source Voltage
30 V
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
290 W
Configuration
Single
Channel Mode
Enhancement
Show more parameters (12)
Height
20.1 mm
Length
16.2 mm
Transistor Type
1 N-Channel
Type
MOSFET
Width
5 mm
Forward Transconductance - Min
24 S
Fall Time
190 ns
Rise Time
430 ns
Typical Turn-Off Delay Time
170 ns
Typical Turn-On Delay Time
80 ns
Part # Aliases
FQA38N30_NL
Unit Weight
0.225789 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

FQA38N30 Specifications and Datasheet | ChipSourceHub