Central Semiconductor
2N3134 PBFREE
Bipolar Transistors - BJT 50Vcbo 35Vceo 4.0Vebo 150mA 10pF
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
13 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Maximum DC Collector Current
- 600 mA
- Collector- Emitter Voltage VCEO Max
- 35 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 4 V
- Collector-Emitter Saturation Voltage
- 600 mV
- Pd - Power Dissipation
- 600 mW
- Gain Bandwidth Product fT
- 200 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- Country of Origin
- IN
Show more parameters (1)
- Unit Weight
- 0.043911 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.