ROHM Semiconductor
R8002ANJFRGTL
MOSFET Nch 800V Vdss 2A ID TO-263(D2PAK); LPTS
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- MOSFET
- Package
- TO-263S-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
19 parameters- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 800 V
- Id - Continuous Drain Current
- 2 A
- Rds On - Drain-Source Resistance
- 4.3 Ohms
- Vgs th - Gate-Source Threshold Voltage
- 3 V
- Vgs - Gate-Source Voltage
- 30 V
- Qg - Gate Charge
- 13 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 62 W
- Configuration
- Single
Show more parameters (7)
- Channel Mode
- Enhancement
- Transistor Type
- 1 N-Channel
- Forward Transconductance - Min
- 0.5 S
- Fall Time
- 70 ns
- Rise Time
- 25 ns
- Typical Turn-Off Delay Time
- 35 ns
- Typical Turn-On Delay Time
- 20 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.