Comchip Technology
BC847C-G
Bipolar Transistors - BJT SM SIGNAL TRANSISTOR
Basic Information
View Datasheet ↗- Manufacturer
- Comchip Technology
- Product Category
- Bipolar Transistors - BJT
- Series
- BC847
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 45 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 0.5 V
- Gain Bandwidth Product fT
- 100 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 800
- Continuous Collector Current
- 0.1 A
- DC Collector/Base Gain hfe Min
- 420
Show more parameters (2)
- Pd - Power Dissipation
- 200 mW
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.