Central Semiconductor
2N5365 TIN/LEAD
Bipolar Transistors - BJT Through-Hole Transis tor-Small Signal (<
Basic Information
- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N5365
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
9 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 40 V
- Collector- Base Voltage VCBO
- 40 V
- Emitter- Base Voltage VEBO
- 4 V
- Collector-Emitter Saturation Voltage
- 250 mV
- DC Collector/Base Gain hfe Min
- 40 at 1 V, 50 mA
- DC Current Gain hFE Max
- 120 at 1 V, 50 mA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.