Central Semiconductor
2N6297 PBFREE
Bipolar Transistors - BJT 4A,80V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
13 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Maximum DC Collector Current
- 4 A
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 3 V
- Pd - Power Dissipation
- 50 W
- Gain Bandwidth Product fT
- 4 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- Country of Origin
- CN
Show more parameters (1)
- Unit Weight
- 0.206000 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.