ROHM Semiconductor
EMX52T2R
Bipolar Transistors - BJT NPN+NPN Driver Transistor
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-563-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 100 mV
- Maximum DC Collector Current
- 100 mA
- Gain Bandwidth Product fT
- 350 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 560 at 1 mA, 6 V
- Continuous Collector Current
- 100 mA
Show more parameters (4)
- DC Collector/Base Gain hfe Min
- 120
- Pd - Power Dissipation
- 150 mW
- Part # Aliases
- EMX52
- Unit Weight
- 0.000106 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.