STMicroelectronics
RF5L08350CB4
RF MOSFET Transistors 400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- RF MOSFET Transistors
- Package
- B4E-5
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
16 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 2.5 A
- Vds - Drain-Source Breakdown Voltage
- 110 V
- Rds On - Drain-Source Resistance
- 1 Ohms
- Operating Frequency
- 1 GHz
- Gain
- 19 dB
- Output Power
- 400 W
- Maximum Operating Temperature
- + 200 C
- Country of Origin
- CN
- Moisture Sensitive
- Yes
- Number of Channels
- 1 Channel
Show more parameters (4)
- Type
- RF Power MOSFET
- Vgs - Gate-Source Voltage
- + 10 V
- Vgs th - Gate-Source Threshold Voltage
- 3 V
- Unit Weight
- 0.141096 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.