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IXYS

IXTA24P085T

MOSFET 24 Amps 85V 0.065 Rds

Basic Information

View Datasheet ↗
Manufacturer
IXYS
Product Category
MOSFET
Series
IXTA24P085
Package
TO-263-3
Mounting Style
SMD/SMT
Packaging
Tube
RoHS
Compliant (source record)

Technical Specifications

23 parameters
Technology
Si
Transistor Polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
85 V
Id - Continuous Drain Current
24 A
Rds On - Drain-Source Resistance
65 mOhms
Vgs th - Gate-Source Threshold Voltage
4.5 V
Vgs - Gate-Source Voltage
15 V
Qg - Gate Charge
41 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
83 W
Channel Mode
Enhancement
Show more parameters (11)
Tradename
TrenchP
Height
4.83 mm
Length
9.65 mm
Type
TrenchP Power MOSFET
Width
10.41 mm
Forward Transconductance - Min
10 S
Fall Time
26 ns
Rise Time
26 ns
Typical Turn-Off Delay Time
53 ns
Typical Turn-On Delay Time
18 ns
Unit Weight
0.056438 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

IXTA24P085T Specifications and Datasheet | ChipSourceHub