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Nexperia

BCP52-10TF

Bipolar Transistors - BJT BCP52T_SER - 60 V, 1 A PNP medium power transistors

Basic Information

View Datasheet ↗
Manufacturer
Nexperia
Product Category
Bipolar Transistors - BJT
Package
SC-73-4
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

16 parameters
Technology
Si
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 60 V
Collector- Base Voltage VCBO
- 60 V
Emitter- Base Voltage VEBO
- 5 V
Collector-Emitter Saturation Voltage
- 500 mV
Maximum DC Collector Current
- 2 A
Gain Bandwidth Product fT
140 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
160
Show more parameters (4)
Continuous Collector Current
- 1 A
DC Collector/Base Gain hfe Min
63
Pd - Power Dissipation
0.6 W
Qualification
AEC-Q101

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

BCP52-10TF Specifications and Datasheet | ChipSourceHub